Orientation dependent interlayer coupling in organic–inorganic heterostructures.

Bartlam C, Saigal N, Heiserer S, Lambers H, Wurstbauer U, Duesberg SG

Advanced Functional Materials, 2024

doi:10.1002/adfm.202315302.

Excitons stabilize above the band gap in bilayer WSe2.

Saigal N, Wurstbauer U

Nature Nanotechnology, 2024

doi:10.1038/s41565-023-01559-0.

Spectroscopic imaging ellipsometry of two-dimensional TMDC heterostructures

Sigger F, Lambers H, Nisi K, Klein J, Saigal N, Holleitner WA, Wurstbauer U

Applied Physics Letters, 2022

doi:10.1063/5.0109189.

Exfoliablity, magnetism, energy storage and stability of metal thiophosphate nanosheets made in liquid medium

Synnatschke K, Dinter van J, Müller A, Tiede D, Spillecke L, Shao S, Kelly D, Konečný J, Konkena B, McCrystall M, Saigal N, Wurstbauer U, Bensch W, Sofer Z, Coleman J, Klingeler R, Haigh S, Backes C

2D Materials, 2023

doi:10.1088/2053-1583/acba2c.

Collective charge excitations between moiré-minibands in twisted WSe2 bilayers from resonant inelastic light scattering.

Saigal N, Klebl L, Lambers H, Bahmanyar S, Antić V, Kennes DM, Wehling TO, Wurstbauer U

arXiv, 2023

doi:10.48550/ARXIV.2310.14417.

Exciton Manifolds in Highly Ambipolar Doped WS2.

Tiede DO, Saigal N, Ostovar H, Döring V, Lambers H, Wurstbauer U

Nanomaterials (Basel, Switzerland), 2022

doi:10.3390/nano12183255.

Low power all optical switching and implementation of universal logic gates using micro-bubbles in semiconductor nanocrystal solutions.

Mukherjee A, Saigal N, Pandey A

Nanotechnology, 2020

doi:10.1088/1361-6528/ab4f3b.

Copper iron sulfide nanocrystal‐bulk silicon heterojunctions for broadband photodetection.

Sugathan A, Saigal N, Rajasekar GP, Pandey A

Advanced Materials, 2020

doi:10.1002/admi.202000056.

Effect of lithium doping on the optical properties of monolayer MoS2.

Saigal N, Wielert I, Capeta D, Vujicic N, Senkovskiy BV, Hell M, Kralj M, Grueneis A

Applied Physics Letters, 2018

doi:10.1063/1.5021629.

Exciton binding energy in bulk MoS2: a reassessment.

Saigal N, Sugunakar V, Ghosh S

Applied Physics Letters, 2016

doi:10.1063/1.4945047.

Reconfiguring crystal and electronic structures of MoS2 by substitutional doping.

Suh J, Tan TL, Zhao W, Park J, Lin DY, Park TE, Kim J, Jin C, Saigal N, Ghosh S, Wong ZM, Chen Y, Wang F, Walukiewicz W, Eda G, Wu J

Nature communications, 2018

doi:10.1038/s41467-017-02631-9.

Synthesis and spectroscopic characterization of alkali–metal intercalated ZrSe2.

Nikonov K, Ehlen N, Senkovskiy VB , Saigal N, Fedorov A, Nefedov A, Wöll C, Santo DG, Petaccia L, Grüneis A

Dalton Transactions , 2018

doi:10.1039/c7dt03756b.

Evidence for two distinct defect related luminescence features in monolayer MoS2.

Saigal N, Ghosh S

Applied Physics Letters, 2016

doi:10.1063/1.4963133.

Phonon induced luminescence decay in monolayer MoS2 on SiO2/Si substrates.

Saigal N, Ghosh S

Applied Physics Letters, 2015

doi:10.1063/1.4938141.

H-point exciton transitions in bulk MoS2.

Saigal N, Ghosh S

Applied Physics Letters, 2015

doi:10.1063/1.4920986.

Angle of incidence averaging in reflectance measurements with optical microscopes for studying layered two-dimensional materials.

Saigal N, Mukherjee A, Sugunakar V, Ghosh S

The Review of scientific instruments, 2014

doi:10.1063/1.4889879.